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| SG50N06T, SG50N06DT Discrete IGBTs Dimensions TO-247AD Dim. A B Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 C(TAB) E C G G=Gate, C=Collector, E=Emitter,TAB=Collector C D E F G H J K L M N SG50N06T SG50N06DT Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA o o Test Conditions TJ=25 C to 150 C TJ=25oC to 150oC; RGE=1 M ; Continuous Transient TC=25oC TC=90oC TC=25oC, 1 ms Maximum Ratings 600 600 20 30 75 50 200 ICM=100 @ 0.8 VCES 300 -55...+150 150 -55...+150 Unit V V A A W o VGE=15V; TVJ=125oC; RG=10 (RBSOA) Clamped inductive load PC TC=25oC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s Md Weight Mounting torque C 300 o C 1.13/10 6 Nm/Ib.in. g (TJ=25oC, unless otherwise specified) Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions IC=250uA; VGE=0V IC=250uA; VCE=VGE VCE=0.8VCES; VGE=0V; IC=IC90; VGE=15 TJ=25 C TJ=125 C o o Characteristic Values min. 600 2.5 5.0 200 1 100 2.5 typ. max. Unit V V uA mA nA V VCE=0V; VGE=20V SG50N06T, SG50N06DT Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values min. gts IC=IC90; VCE=10V Pulse test, t Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK 0.25 Inductive load, TJ=25 C IC=IC90; VGE=15V VCE=0.8VCES; RG=Roff=2.7 Remarks:Switching times may increase for VCE(Clamp) 0.8VCES' higher TJ or increased RG Inductive load, TJ=25 C IC=IC90; VGE=15V VCE=0.8VCES; RG=Roff=2.7 Remarks:Switching times may increase for VCE(Clamp) increased RG 0.8VCES' higher TJ or o o Unit typ. 35 max. S 25 2% 300us, duty cycle 4000 VCE=25V; VGE=0V; f=1MHz 340 100 110 IC=IC90; VGE=15V; VCE=0.5VCES 30 40 50 50 200 150 3.0 50 50 2 280 250 4.2 0.62 300 270 6.0 180 50 100 ns ns ns ns mJ ns ns mJ ns ns mJ K/W K/W nC pF Reverse Diode (FRED) Symbol Test Conditions (TJ=25oC, unless otherwise specified) Characteristic Values min. typ. max. 2.5 22% 2 35 2.5 175 50 0.65 A ns ns K/W V Unit VF IF=IC90; VGE=0V; Pulse test; t 300ms, duty cycle IRM trr RthJC IF=IC90; VGE=0V; -diF/dt=100A/ms VR=100V; IF=1A; -di/dt=200A/ms; VR=30V |
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